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The experimental and theoretical concepts of the physical and chemical properties of tin dioxide which favor its use in semiconductor gas sensors are systematized. The interrelations of the band structure, the nature of intrinsic defects, microstructure parameters, and reactivity of nanocrystalline SnO 2 during the detection of gases of different chemical nature are considered. The existing concepts which describe the change in electrical properties and the mechanism of the sensor signal formation are analyzed.
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Marikutsa et al. (2015) studied this question.
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