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November 22, 1993Applied Physics Letters

Point defect generation during high temperature annealing of the Si-SiO2 interface

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Authors

RDR. A. B. DevineUniversity of GenevaDMD. MathiotCentre National de la Recherche ScientifiqueWWW. L. WarrenUniversity of North Carolina at Charlotte

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Devine et al. (1993) studied this question.

synapsesocial.com/papers/6a9e678c46bb483cebf6d100https://doi.org/10.1063/1.110275
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Kinetics of high-temperature thermal decomposition of SiO2 on Si(100)1987 · 164 citations
  2. 2Defect reactivation and structural relaxation in deposited amorphous SiO21991 · 13 citations
  3. 3Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors1990 · 157 citations
  4. 4On the Kinetics of the Thermal Oxidation of Silicon: III . Coupling with Other Key Phenomena1981 · 71 citations