The n + etching process is investigated for the fabrication of TFT-LCD (thin film transistor liquid crystal display) deposited with low resistance data lines of Mo/Al/Mo. Problems of consumption of the upper Mo layer and contamination of the channel area can be resolved using a PR mask. With a PR mask, either HCl or Cl 2 can be selected as a main etchant gas, and either SF 6 or CF 4 can be selected as an additive. Plasma treatment after the n + etching process can reduce the high off-current problem which occurs when the Mo data line is in contact with the n + a-Si layer.
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Choe et al. (2004) studied this question.
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