At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this paper, we report details of the MBE growth experiments and describe the structural, optical, and electrical properties that this new infrared quantum alloy of HgCdTe possesses.
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Han et al. (1989) studied this question.
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