Answers are grounded in this paper and cite their sources.
The zeta-factor method is applied to the thickness determination of thin amorphous specimens where the convergent-beam electron diffraction method is not applicable. Characteristic X-ray intensities are first measured using standard specimens in order to determine zeta-factors. These zeta-factors are then used to determine local thicknesses of an amorphous Si and an amorphous Al alloy. Electron energy-loss spectroscopy (EELS) spectra are acquired at the same positions as for the X-ray measurements. Thus, using the thicknesses measured from the zeta-factor method, the electron mean-free path is determined through the EELS log-ratio method. The mean free path is measured as a function of the collection semi-angle, beta, and specimen thickness, and it is also compared with theoretical values. Furthermore, the mean free path of amorphous Si is compared with that of the crystalline Si.
No takes yet. Share an insight, caveat, or question.
Katsunori Ohshima (2004) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: