Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C

A diffusion barrier layer was self-formed at the interface between Cu–Mn alloy and tetraethylorthosilicate oxide layers at 250–450°C. No interdiffusion occurred across the self-formed barrier layer during annealing at these temperatures up to 100h. The growth of the barrier layer obeyed a logarithmic law and depended on manganese concentration. The barrier thickness could be controlled in the range of 2–8nm.