A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique

We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an 800×0.35-μm2GaAs pHEMT.