In situ surface analysis reveals reversible phase reconstruction during initial GaAs(001) nitridation, highlighting temperature-dependent arsenic dimer rearrangement mechanisms.
The nitridation process of an As-terminated GaAs(001)-β2(2×4) surface was studied by time-resolved reflection high-energy electron diffraction (RHEED) and in situ scanning tunneling microscopy (STM). On the intermediate nitrided surface, a (3×4)-ordered phase was formed by the rearrangement of the As-dimer pairs at 520°C. This phase reverted back to the (2×4)-ordered phase below 400°C (reverse reconstruction by the re-adsorption of As atoms). We propose a model to explain this behavior.
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Imayoshi et al. (1999) studied this question.
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