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The purpose of this paper is to provide a study of optical bistability in inhomogeneously pumped multiquantum well (MQW) laser diodes. To achieve this aim, gain and spontaneous emission data, calculated for a specific MQW laser material structure, have been incorporated into a model of an inhomogeneously pumped laser diode. Results are presented which show a number of differences between the bistable behaviour of MQW and bulk GaAs segmented devices. Experimental results are included to provide a basis for a qualitative comparison with the theoretical model.
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Middlemast et al. (1991) studied this question.
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