Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N( i Pr 2 PTe) 2 ]} 3

Aerosol-assisted chemical vapour deposition (AACVD) studies using {M(μ-Te)[N(iPr2PTe)2]}3 (M = In, Ga) were carried out on glass and Si(100) substrates at deposition temperatures between 325–475 °C. Black, adherent films were obtained in all cases and characterized by XRD, SEM, EDAX and Raman spectroscopy. The indium precursor gave cubic In2Te3 exclusively, whereas the gallium complex generated a mixture of cubic Ga2Te3, monoclinic GaTe and hexagonal Te. Mass spectrometric studies indicate that fragmentation of the indium precursor to give In2Te3 is accompanied by the formation of In[N(iPr2PTe)2]2+ and [N(iPr2PTe)2]2−.