Chemical vapour deposition of II–VI semiconductor thin films using M[(TeP i Pr 2 ) 2 N] 2 (M = Cd, Hg) as single-source precursors

The aerosol-assisted chemical vapour deposition (AACVD) of CdTe has been carried out using Cd[(TePiPr2)2N]2 at substrate temperatures between 375 and 475 °C. XRD shows the formation of cubic CdTe between 425 and 475 °C. At low deposition temperature (375 °C), a mixture of hexagonal tellurium and cubic cadmium telluride is observed. SEM images reveal that the growth temperatures do not have a profound effect on the morphologies of films. Surface analysis by XPS of films deposited at 475 °C showed the growth of Te-rich films. The AACVD of Hg[(TePiPr2)2N]2 resulted in deposition of hexagonal tellurium.