Fabrication of Textured Silicon Carbide via Seeded Anisotropic Grain Growth

Highly textured silicon carbide was fabricated via anisotropic grain growth. Large, platelike grains were grown from a fine‐grained sintered matrix which had been seeded with ≤2% SiC platelets. The seeds were initially incorporated with preferred orientation during the green‐state forming process and this resulted in oriented growth of the platelike grains. The development of texture in the samples was evident from microstructure observations and X‐ray diffraction analysis.