Reactions of point defects and dopant atoms in silicon

We report long-range interstitial migration of B in Si at low temperature, initiated by kick-out reactions with self-interstitials (I) created by Si implantation. At 450^∘{}C, migration path lengths {~}100 nm are measured within a time frame of 15 min. Observations of the number and spatial distribution of displaced B atoms in relation to the distributions of I and vacancies (V) computed from ion transport theory allow us to deduce the reaction kinetics. The reactions I+Bₛ{→}Bᵢ, V+Bᵢ{→}Bₛ, and I+V{→}0 are essentially diffusion limited, with capture radii of atomic dimensions.