Performance Improvement of CoTiO[sub 3] High-k Dielectrics with Nitrogen Incorporation

In this paper, three approaches to incorporating nitrogen in high- k dielectric films, ion implantation of , ion implantation of , and plasma treatment have been investigated for the new high- k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.