Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I

The scale-up of a new silicon thin film deposition technique employing supersonic molecular beams is investigated. Small area silicon thin film deposition was proven successful previously. This study aims to investigate the possibility of a larger scale deposition using axisymmetric ring sources through the numerical approach. It is found that the use of axisymmetric ring nozzle sources can significantly increase the deposition area and improve the film uniformity. The simulations show a uniform silicon growth over an area 18 cm in diameter at ∼155 Å/min. The geometrical effects of the ring nozzle sources and the substrate to nozzle distance are studied. The influence of the source flow rate and pumping capacity is also examined.