Neodymium and manganese-doped BiFeO3 — (Bi0.95Nd0.05)(Fe0.95Mn0.05)O3(BNFMO) ferroelectric film and HfO2 layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition (ALD) method, respectively. Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 200 nm thick BNFMO and 5 nm thick HfO2 layer on silicon substrate have been prepared and characterized. It is found that there is no distinct interdiffusion and reaction occurring at the interface between BNFMO/HfO2 and HfO2/Si . The capacitance–voltage (C–V) and leakage current properties of Pt/HfO2/Si capacitors with different HfO2 thickness were studied. The MFIS structure showed clockwise C–V hysteresis loops due to the ferroelectric polarization of BNFMO . The maximum memory window is 5 V. The leakage current of the Pt/BNFMO/HfO2/Si capacitor was about 2.1 × 10-6 A/cm2 at an applied voltage of 4 V.
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Xie et al. (2011) studied this question.
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