Electrical characteristics of metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field-effect transistors

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors and field effect transistors (FETs) with Al∕BiFeO3∕Y2O3∕Si structure were fabricated. The capacitance-voltage (C-V) characteristics exhibit clockwise hysteresis loop due to the ferroelectric polarization of BiFeO3. The maximum C-V memory window was 0.88V at a sweep voltage range of 5V. Low leakage current density of 7×10−9A∕cm2 was measured at an applied voltage of 5V using MFIS capacitors. The IDS-VDS and IDS-VGS characteristics of MFISFETs were measured. The subthreshold slope was 170mV∕dec and the maximum electron mobility was 155cm2∕Vs.