Porous β-SiC on Si substrates was prepared by carbon ion implantation into Si crystal wafers with a dose of 5 x 10 17 cm -2 at an energy of 50 keV followed by thermal annealing and electrochemical anodization. Compared with common porous Si, the Si-based porous β-SiC does not only exhibit blue emission but also has good thermal stability when oxidized up to 850 °C for 30 min. This PL stability is due to the thermal stability of Si-C bonds in porous β-SiC.
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Liao et al. (1996) studied this question.
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