Low-temperature photoluminescence in pulled Si irradiated with 3-MeV electrons exhibits a prominent zero-phonon line at 0. 97 eV which anneals between 200 and 275°C according to previous isochronal data. Isothermal annealing measurements are reported which reveal an activation energy of about 1. 34 eV for the annealing of this line.
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Wong et al. (1971) studied this question.
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