We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approximately 900.3em0exnm. The side gates are also effective in the quantum Hall regime and allow to modify the longitudinal and Hall resistances.
No takes yet. Share an insight, caveat, or question.
Molitor et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: