Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 14, 1994Applied Physics Letters

Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge)

View Full Paper
Ask AI
Bookmark
Share

Authors

NBNelson Liebentritt de Almeida BragaABA. BuczkowskiUnder Armour (United States)HKH. KirkNorth Carolina State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Braga et al. (1994) studied this question.

synapsesocial.com/papers/6a9e8b14db63f9b8c5367bb2https://doi.org/10.1063/1.111899
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Influence of dislocations on properties of shallow diffused transistors1969 · 52 citations
  2. 2Metal-induced dislocation nucleation for metastable SiGe/Si1991 · 33 citations
  3. 3High-mobility modulation-doped SiGe-channel p-MOSFETs1991 · 121 citations