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August 1, 1991IEEE Electron Device LettersOpen Access

High-mobility modulation-doped SiGe-channel p-MOSFETs

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SVS. Verdonckt-VandebroekIBM (United States)ECE.F. CrabbéIBM (United States)BMB.S. MeyersonJohannes Kepler University of Linz

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Verdonckt-Vandebroek et al. (1991) studied this question.

synapsesocial.com/papers/6a9fcb283dfbbd0b17e61c1ehttps://doi.org/10.1109/55.119161
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