Twin boundaries in a crucible‐grown silicon crystal are investigated. A specimen was found to contain both low‐energy boundaries in (111)‐planes and high‐energy boundaries in (221)‐planes. This structure resulted from simultaneous twinning on the four lower octahedral planes during pulling along a [100]‐growth axis. P‐n junction diodes show "soft" reverse characteristics at the high‐energy boundaries. This is attributed to precipitates. Neither preferential "softness" nor precipitation is detected on the (111)‐boundaries. Neither boundary gives any enhancement of impurity diffusion.
No takes yet. Share an insight, caveat, or question.
H. J. Queisser (1963) studied this question.