Electrical and Optical Characteristics of Bi4Ti3O12 Thin Film on Indium–Tin-Oxide/Glass

Thin films of bismuth titanate are deposited on indium–tin-oxide (ITO)/glass substrates by RF magnetron sputtering for 60 min at room temperature using a Bi 4 Ti 3 O 12 +4 wt % Bi 2 O 3 ceramic target, and they are annealed at various temperatures ranging from 600 to 725 °C by a rapid thermal processing for 10 min. The experimental results indicate that the Bi 4 Ti 3 O 12 films annealed at 675–700 °C exhibit superior electrical characteristics compared to those of other ferroelectric materials such as BaTiO 3 , PbTiO 3 , and SrTiO 3 films, including a higher dielectric constant, a higher polarization charge density, and a more stable leakage current density. In addition, a high optical transmittance of the film was obtained at an annealing temperature of 650 °C. The results suggest that Bi 4 Ti 3 O 12 thin film is a candidate worthy of consideration as the insulating layer material of AC thin film electroluminescence devices.