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The effect of the irradiation of single-crystal GaN films with accelerated atomic (P) and molecular (PF 4 ) ions with an energy of 0.6 keV amu −1 on the crystal structure and optical properties of the films is considered. It is shown that, compared to irradiation with atomic ions, irradiation with small clusters induces (i) more rapid accumulation of structural defects, (ii) more efficient suppression of the violet luminescence band, and (iii) shorter decay times of the intensity of this band.
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Karaseov et al. (2014) studied this question.
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