Answers are grounded in this paper and cite their sources.
We present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot.
No takes yet. Share an insight, caveat, or question.
Donnelly et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: