Novel positive resists of poly(methylphenyl methacrylate) and poly(methylphenyl methacylate)-co-(methyl methacrylate) were synthesized and their performance as electron beam resists was evaluated, initially with spin-cast films and then with Langmuir-Blodgett(LB) films on silicon substrate, for optimum sensitivity and resolution. The fine patterns were formed at the dose range of 250-350 μC/cm2, and developed in the solution made of various ratio of MIBK/IPA mixture. The best resolution was 80 nm for the PMPMA resist and 0.14 μm for the P(MPMA-MMA) resist.
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Kim et al. (1997) studied this question.
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