Answers are grounded in this paper and cite their sources.
Surface morphology evolution of strained InAs/GaAs (331) A films was systematically investigated in this paper. Under As -rich conditions, InAs elongated islands aligned along [Formula: see text] are formed at a substrate temperature of 510°C. We explained it as a result of the anisotropic diffusion of adatoms. Under In -rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett.77, 1330 (1996)], we interpret the resulting surface morphology evolution.
No takes yet. Share an insight, caveat, or question.
Gong et al. (2006) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: