Physical properties of the AuZnSe metal–semiconductor contact

In order to investigate impact ionization processes on A2B6-compounds it has been necessary to realize well defined Schottky diodes. For this reason detailed studies on the nature of evaporated Au contacts on n-ZnSe monocrystals have been performed. From the temperature dependence of the current-voltage characteristics, from space charge capacity measurements, and from photoemission results the junction parameters have been determined in good consistency. From the results it is concluded that the transport is dominated by thermionic emission, and that for the barrier height the Schottky model is appropriate for ZnSe MS contacts.