Transmission of an obliquely incident electron wave through GaAs-AlxGa1−xAs structures: Application to an electron wave filter

Transmission of an obliquely incident electron wave through GaAs-AlxGa1−xAs structures is analyzed using a generalized transmission matrix approach. Angle dependence is investigated quantitatively. Concepts of critical angle are discussed for step barrier structures. It is verified that the transmission probability is a function of longitudinal energy. Consequences of resonant tunneling of a non-normal incident electron wave through a double barrier heterostructure (DBHS) are discussed. It is found that the angle of incidence largely affects the probability of tunneling of electrons through DBHS. Application to an electron wave filter is discussed.