Synthesis and characterization of amorphous carbon nitride films

We report the high-pressure, 1066 Pa (8 Torr), chemical vapor deposition (CVD) synthesis of amorphous carbon nitride films using a d.c. glow discharge technique. X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure were used to study the film stoichiometry and bonding as a function of substrate temperature and flux of hydrogen to the growth surface. Experiments show that the film stoichiometry is constant with substrate temperature up to 600 °C, above which film growth was not observed. The addition of small amounts (1.5 at.%) of molecular hydrogen causes poisoning of film growth. Multiple sp2 bonding states, with little sp3 bonding, were present in the films. Scanning electron microscopy of the films reveals an unusual filamentary growth phase.