Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range

We report on site-controlled growth of InP/GaInP quantum dots (QDs) on GaAs substrates. The QD nucleation sites are defined by shallow nanoholes etched into a GaInP layer. Optimized growth conditions allow us to realize QD arrays with excellent long range ordering on nanohole periods as large as 1.25 µm. Single QD lines with an average linewidth of 553 µeV and best values below 200 µeV are observed. Photoluminescence spectroscopy reveals excitonic and biexcitonic emission in the wavelength range of about 670 nm (1.85 eV) with an exciton-biexciton splitting of 1.8 meV. Second-order photon-autocorrelation measurements show clear single photon emission with g(2)(0) = 0.13 ± 0.01.