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We present photon correlation measurements performed on a device based on single InP quantum dots. The device consists of a 400 nm thick membrane containing a low density of quantum dots on a metal mirror. Measurements done under continuous excitation reveal a very pronounced antibunching dip while measurements done under pulsed excitation enable the generation of single photons on demand at the optimum wavelength for silicon-based single-photon detectors.
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Zwiller et al. (2003) studied this question.
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