Observation of three distinct phases leading to pulsed surface flashover along silicon without end contacts in vacuum

Preliminary voltage and current data for pulsed surface flashover phenomena on high-purity ( rho >30 k Omega -cm) silicon in vacuum ( approximately 10/sup -4/ Pa) are presented. Pulses with 390-ns risetime, 10->or approximately=s duration, and voltages ranging from 5 to 25 kV were used for this investigation. The authors observed three distinct phases leading to the breakdown condition. These are bulk conduction (leakage current), surface conduction, and complete surface flashover processes. The impulse-volt-time characteristic for the silicon sample is presented.>