Answers are grounded in this paper and cite their sources.
Radioactive 119 Sn m has been implanted in GaAs single crystals at room temperature with an energy of 60 keV. The creation and annealing of impurity-defect structures has been studied by means of Mossbauer spectroscopy on the 24 keV gamma -transition of 119 Sn. The distribution of defects surrounding the Sn impurity atoms in the amorphous phase has been characterised by an analysis of the measured Mossbauer spectra in terms of four lines. The formation and annealing of impurity-defect structures during the recrystallisation of the host crystal between about 200-400 degrees C has been followed by Mossbauer spectroscopy.
No takes yet. Share an insight, caveat, or question.
Holm et al. (1980) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: