For Co doped ZnO single crystals grown from the zinc-rich (lower) phase boundary as well as from the oxygen-rich (upper) one the electrical conductivity and the Hall coefficient are measured in the temperature range from 77 up to 1000 K. Co mainly influences the electrical properties by changing the degree of non-stoichiometry and with it the concentration of native defects (donors). At higher Co contents (> 0.2%) only an additional donor can be detected in comparison with undoped ZnO. This donor is assumed to be a Co complex and has an ionization energy of about 30 meV.
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Ziegler et al. (1982) studied this question.
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