A Measurement of Relaxation Time of Dipole and Dielectric Loss Factor in Very Low Frequency by Thermally Stimulated Current

A new method of measuremeing dielectric properties such as relaxation time of dipole, its activation energy and dielectric constant in very low frequency (less than 0.1 Hz) by thermally stimulated current (TSC) is described. Relations between the dielectric properties and TSC are theoretically analyzed, and experimental results on SiO 2 films are illustrated. It is shown that this method is more useful than the other methods in the measurement of dielectric properties due to dipoles having the distributed relaxation time and the activation energy. The distribution of the activation energy on SiO 2 films was obtained by computer calculation.