A model of the adsorption of S, Se, and Te atoms on silicon is proposed. The model adequately describes the variation of the work function of the S/Si(100) and Se/Si(111) systems over the coverage range from zero to one monolayer. The S-Si, Se-Si, and Te-Si adsorption bond energies are estimated using the bonding-orbital method.
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S. Yu. Davydov (2005) studied this question.
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