Growth of Indium‐Tin‐Oxide Thin Films by Atomic Layer Epitaxy

Indium‐tin‐oxide thin films were deposited by atomic layer epitaxy at 500°C using , , and water as precursors. The films were characterized by means of x‐ray diffraction, scanning electron microscopy, energy dispersive x‐ray analysis, polarography, and by optical and electrical measurements. The films had polycrystalline structure. In addition, the phase was detected in films containing the highest tin contents. High transparencies and resistivities in the order of could be achieved by optimizing the tin doping procedure. Postannealing decreased the resistivity about 5%.