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InGaAlAs/InP double heterojunction bipolar transistors with continuously graded base–emitter and base–collector junctions were successively fabricated, and their DC characteristics measured. The devices exhibited a lower offset voltage (Voffset <20 mV), lower output conductance and higher collector–emitter breakdown voltage (BVCEO >13 V, BVCBO > 20V) than are typically achieved in single heterojunction InGaAlAs devices.
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Vlcek et al. (1991) studied this question.
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