Features of the Interaction of a Radio-Frequency Discharge of Freon R-23 (CHF3) with Gallium Arsenide and Silicon

To provide the formation of the surface topography of semiconductors, a halogen-containing plasma, in particular, freons, is commonly used. The paper describes a comparative atomic force microscopy study of the plasma chemical interaction of freon R-23 with the surface of silicon and gallium arsenide semiconductors in terms of purity and uniformity of the process. Freon R-23 is commonly used in the technology of industrial etching of Si, Ge, and a number of other materials because it provides acceptable interaction rates while maintaining a uniform surface suitable for further procedures of the technological cycle.