I n s i t u grown-in selective contacts to n-i-p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask

Highly selective n- and p-type contacts to GaAs doping superlattices have been achieved by using molecular beam epitaxial growth through a silicon shadow mask to form interdigital grown-in contacts. Low contact resistance, excellent diode characteristics, and efficient lateral injection electroluminescence are obtained.