Selective area growth of GaP on Si by MOCVD

Single crystals of GaP were grown on 4° miscut (100) Si substrates by selective area metalorganic chemical vapor deposition. Silicon nitride patterns were used to mask the wafer; no GaP nucleated on the silicon nitride patterns. The top and side walls of the selectively grown GaP stripes (3 μm width) seem to be the (100) and (111) crystal planes. Cross-sectional TEM analysis revealed a smooth GaPSi interface. Focused Raman spectroscopy with a spatial resolution of ∼ 1 μm was used to assess the crystal quality of individual GaP mesas.