The IR absorption is investigated in as-deposited and annealed CrSiO thin films in the spectral range from 400 to 1500 cm−1. The samples are prepared by reactive plasmatron sputtering under various oxygen partial pressures resulting in different oxygen concentrations at constant Cr/Si ratio. The annealing was carried out in argon atmosphere at temperatures between 600 and 1100 K. The main absorption band occurs in the frequency region of the bond stretching mode of SiOx. This absorption band is measured in unpolarized as well as polarized light and analyzed by comparison with results on amorphous SiOx films. From this analysis conclusions are drawn about the formation of the dielectric phase in the CrSiO thin films.
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Den et al. (1986) studied this question.
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