High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

InTiZnO thin-film transistors (ITZO TFTs) with Al 2 O 3 gate dielectrics are fabricated by magnetron sputtering at room temperature. The bottom-gate-type ITZO TFTs with amorphous Al 2 O 3 gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm 2 /V·s, threshold voltage of 1.2 V, subthreshold swing of 94.5 mV/decade, and on/off-current ratio of 7 × 10 6 . We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.