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Study improves on-off-current ratio in titanium oxide transistors, suggesting effective plasma treatment methods.
Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N 2 O plasma treatment to improve the on-off-current ratio in n-type titanium oxide ( TiO x ) active-channel thin-film transistors. While the high-power (275 W) N 2 O plasma treatment oxidizes the whole TiO x channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.
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Park et al. (2009) studied this question.
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