P‐97: Improved Electrical Performance and Realiability of a‐IGZO TFT by N2O Plasma Treatment Optimization

This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N 2 O plasma treatment and proposes a solution according to the presence of N 2 O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N 2 O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N 2 O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N 2 O plasmaremoved during the post‐process exhibited non‐ideal negative V th shifts under PBTS, the devices fabricated with N 2 O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal V th shift phenomenon. This study shows that maintaining N 2 O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production.