Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility μsat, whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltageVth. We therefore obtain excellent device characteristics at 350°C with μsatof 1.57 cm2/V ·s,Vthof 1.28 V, an on/off ratio of ~1.4 × 107, and a subthreshold gate swing of 0.59 V/dec.