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December 28, 2009Advanced Materials

Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors

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Authors

SJSunho JeongKyung Hee UniversityYHYoung‐Geun HaKyonggi UniversityJMJooho MoonSogang University

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Jeong et al. (2009) studied this question.

synapsesocial.com/papers/69d8d1da13e0539d74beda5dhttps://doi.org/10.1002/adma.200902450
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