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Step bunching with a bunching unit of a four-atomic step has been observed on vicinal Si(113) surfaces which are misoriented by 0.37° towards a direction about 36° off [1̄10]. A strong short-range attractive interaction and a long-range repulsive interaction between the four-atomic steps have been revealed. The influence of the repulsive interaction is observed even at about 700 °C. The bunching can be enhanced by optimizing the growth conditions followed by annealing. The experiments confirm the low surface energy of the Si(113) plane.
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Zhu et al. (1998) studied this question.
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